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| JMnic Product Specification Silicon NPN Power Transistors 2SC3164 DESCRIPTION With TO-247 package Switching power transistor High breakdown voltage PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-247) and symbol DESCRIPTION Absolute maximum ratings(Tc=25ae ) SYMBOL VCBO VCEO VEBO IC IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Base current Total power dissipation Junction temperature Storage temperature TC=25ae Open emitter Open base Open collector CONDITIONS VALUE 500 400 7 10 4 100 150 -55~150 ae ae UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 1.25 UNIT ae /W JMnic Product Specification Silicon NPN Power Transistors 2SC3164 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. MAX UNIT SYMBOL VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0 400 V VCEsat Collector-emitter saturation voltage IC=5A ;IB=1A 1.0 V VBEsat Base-emitter saturation voltage IC=5A ;IB=1A 1.5 V ICBO Collector cut-off current At rated voltage 0.1 mA ICEO Collector cut-off current IEBO Emitter cut-off current At rated voltage 0.1 mA hFE-1 DC current gain IC=5A ; VCE=2V 15 hFE-2 DC current gain IC=1mA ; VCE=2V 5 fT Transition frequency IC=0.6A ; VCE=10V 20 MHz 2 JMnic Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3164 Fig.2 Outline dimensions 3 |
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